SiC GaN wafer photoluminescence-compatible defect scanner
High-speed laser defect scanner compatible with photoluminescence mapping.
It has been developed to meet the needs for subsurface defect inspection and classification functions of silicon carbide (SiC) and gallium nitride (GaN) based wafers and compound semiconductor materials. A variety of wafer processing options are available, minimizing the cost per pass while providing best-in-class throughput and sensitivity, catering to both research and development and mass production.
- Company：日本レーザー
- Price：Other
